Uranium recovery with zinc distillation from a liquid zinc cathode for pyroprocessing

Journal of Radioanalytical and Nuclear Chemistry - U recovery test was performed on a Zn-U alloy to confirm the feasibility of Zn as an alternative cathode material. An evaporation test of pure Zn...     

Group extensions and free actions by finite groups on solvmanifolds

The purpose of this paper is to generalize Yalçin's result [Trans. Amer. Math. Soc. 352 , 2689–2700 (2000)] from tori to solvmanifolds. As a result, we prove that if (?_p)^r acts freely on a solvmanifold M of dimension n, then r ≤ n (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Three-bridge links with infinitely many three-bridge spheres

We construct infinitely many three-bridge links each of which admits infinitely many three-bridge spheres up to isotopy.     

Optical and Electrical Properties of Ferroelectric SBN Thin Films Prepared by Sol-Gel Process

Strontium barium niobate thin films were prepared by sol-gel method on various substrates using an improved process, two-step heating process. The two-step heating process applies an additive heat-treatment before crystallization for enhancement of the densification and the nucleation of films. Also, highly c-axis oriented SBN thin films with various compositions were obtained on MgO(100) and Pt(100)/MgO(100) substrates. Their optical and electrical properties such as optical propagation loss, refractive index, P-E hysteresis, and dielectric constant, were characterized as a function of the film composition.     

Synthesis and characterization of a novel polymer based on anthracene moiety for organic thin film transistor

We have designed and synthesized a new polymer, which could be used in the organic thin film transistor (OTFT). Poly[2,6‐bis(3′‐dodecythiophene‐2′‐yl)anthracene] (PDTAn), which is composed with anthracene moiety and dodecyl alkyl thiophene, was synthesized by oxidative polymerization using iron (III) chloride. The mole ratio of FeCl₃ and monomer (4.2:1), keeping low temperature during the initiation reaction, amount of solvent, and dropping order were very important for oxidative polymerization without crosslinking. The molecular weight of the polymer (M_w) was measured to be 40,000 with 2.85 of polydispersity index by GPC. The physical and optical properties of the polymer were characterized by differential scanning calorimetry (DSC), cyclic voltammetry (CV), and optical absorption and photoluminescence (PL) spectroscopy. A field‐effect mobility of 1.1 × 10^?4 cm² V^?1 S^?1, a current on/off ratio of 10⁵, and the V_th at ?15.2 V had been obtained for OTFTs using this polymer semiconductor by solution coating. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 5115–5122, 2008     

Visual performance improvement analytics of predictive model for unbalanced panel data

Journal of Visualization - An unbalanced panel is a dataset in which at least one subject is not observed some times. Moreover, each subject is recorded with irregular periods and intervals....     

Palladium-Catalyzed Regioselective Synthesis of 3-Arylindoles from N-Ts-Anilines and Styrenes

A Pd-catalyzed intermolecular oxidative annulation between N-Ts-anilines and styrenes was developed. This method offers a straightforward and robust approach to a wide range of 3-arylindoles using readily available starting materials with good functional-group tolerance and high regioselectivity and efficiency. Further elaboration of the products obtained from this process provided access to highly functionalized and structurally diverse indoles, for example, 3-(indol-3-yl)carbazoles, 1,9-dihydropyrrolo-[2,3-b]carbazoles, and 3′-aryl-3,5′-biindoles.     

Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam

Highly selective and low damage etching of the GaAs cap layer on AlGaAs is essential in fabricating GaAs/AlGaAs high electron mobility transistors. The GaAs on AlGaAs was etched using a low energy Cl₂/O₂ neutral beam and the Schottky device characteristics fabricated on the exposed AlGaAs were compared with those fabricated after the etching using wet etching and a Cl₂/O₂ ion beam. Using a low energy Cl₂/O₂ ion beam or a Cl₂/O₂ neutral beam, highly selective etching of the GaAs cap layer to AlGaAs similar to wet etching could be achieved through the formation of Al₂O₃ on the exposed AlGaAs during the etching. When the electrical characteristics of the Schottky devices were compared, the devices fabricated after the etching using the neutral beam showed the best electrical characteristics such as electrical stability, low leakage current, higher barrier height, etc. by showing low damage to the exposed AlGaAs surface.